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Numerical modeling of capacitance spectroscopy of hydrogenated amorphous silicon Schottky diodes is carried out. We test the accuracy of the determination of the density of states at the Fermi level, g(E F ), from an analytical treatment of the temperature (T) and frequency (f) dependence of the capacitance (C). Assessment of the position of the Fermi level and the attempt-to-escape frequency...
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