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Stresses in heterostructures containing lattice mismatched GeSi stripes (of half-width l and thickness h) deposited on Si substrates are calculated using the finite element (FE) method. It is shown that the stress distribution is a unique function of l/h, it does not depend on l and h separately or on the substrate dimensions if the substrate dimensions are sufficiently large. Ratio E E =...
A numerical method developed originally for calculating the edge-induced relaxation of film stress in a semi-infinite thin film, and the corresponding stresses induced in the substrate, is extended to apply to stripes of finite width 2l and thickness h. Values of relaxation are obtained by numerical integration for several values of the ratio R = Kl/h (K depends on the elastic constants of the film...
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