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Strained silicon germanium (sSiGe), as channel materials, has received a lot of attention due to its high hole mobility [1]–[4]. sSi/sSiGe/sSOI heterostructure substrate [5]–[8] takes the advantages of the tensile strained Si layer, and thus can increase the critical thickness for pseudomorphically grown SiGe with high Ge concentration. In this work, QW p-MOSFETs [9]–[11] on sSi/sSi0.5Ge0.5/sSOI substrate...
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