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GaN substrates grown from solution under high N 2 pressure without an intentional seeding are almost dislocation free single crystals in the form of thin (about 100μm) hexagonal platelets with a lateral size up to 1cm. They were used as substrates for HVPE which allows very fast growth of GaN in the c-direction. Both n-type GaN crystals (lattice mismatch to pure GaN of 10 −4 due to...
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