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The effects of an intentional interface engineering of a heterogeneous CeO2-Nb:SrTiO3 interface on the resistive switching behaviors of HfO2-based resistive random access memory (RRAM) has been investigated. Switching parameters including set voltage, reset voltage, low resistance state and high resistance state, are greatly improved by the interface engineering. Besides, low power consumption RRAM,...
This paper discusses a practical technique to accurately correlate package level ESD protection results by HBM (human body model) zapping and TLP (transmission line pulsing) testing. It is found that the ESD pulse duration plays a key role in correlating HBM and TLP testing results as verified by evaluating 40V-5V DC-DC convertor ICs.
Power devices based on Silicon Carbide (SiC) have better performances than its silicon counter-parts on the switch level. This paper describes the current state of the art of SiC devices briefly. Then the applications of SiC devices in several typical applications are given. And the hinder to the broader implementation of SiC devices are discussed. Finally, the perspective of SiC power devices is...
The SiC MOSFETs are finding their niche in 1 kV range, which is currently dominated by Si IGBTs. Thus, the frequencies of power converters could be increased remarkably and the power density could be higher. The gate driver for SiC MOSFET would affect the performance significantly, and a direct transplant of gate driver for Si MOSFET would not be reliable and efficient. This paper attempts to evaluate...
In virtualized environments, the customers who purchase virtual machines (VMs) from a third-party cloud would expect that their VMs run in an isolated manner. However, the performance of a VM can be negatively affected by co-resident VMs. In this paper, we propose vExplorer, a distributed VM I/O performance measurement and analysis framework, where one can use a set of representative I/O operations...
Today, there is an increasing demand for high frequency, high power and high temperature applications where the converters will operate in a harsh environment. Switching devices based on Silicon Carbide (SiC) offer a significant performance improvement on the switch level compared with Si devices. This paper describes the current state of the art in SiC devices briefly. Then the research and development...
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