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Strain relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method was investigated as a function of SiGe thickness. Complete relaxation was obtained for SiGe layer having the thickness of more than 60 nm, leading to the establishment of highly relaxed SGOI wafer fabrication. The photoluminescence evaluation of the strained Si/SGOI wafers showed high Ge...
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