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Fabricating ultrathin silicon (Si) channels down to critical dimension (CD) <10 nm, a key capability to implementing cutting‐edge microelectronics and quantum charge‐qubits, has never been accomplished via an extremely low‐cost catalytic growth. In this work, 3D stacked ultrathin Si nanowires (SiNWs) are demonstrated, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1...
Droplet Control
In article number 2204390, Linwei Yu and co‐workers successfully demonstrate stacked growth integration of ultrathin silicon nanowires, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1.8 nm approaching to the critical‐dimension of 10 nm technology node, thanks to a self‐delimited droplet control strategy, with tunable channel cross‐sections, which are ideal...
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