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In metalorganic vapor-phase epitaxy (MOVPE) growth of III–V semiconductor compounds and device structures, arsine (AsH 3 ) and phosphine (PH 3 ) are normally used as group V precursors and hydrogen is used as the carrier gas, which is very toxic and has safety hazard. In this contribution, MOVPE growths of Al-free 808nm high power diode lasers by using metalorganic (MO) group V sources,...
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