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The reliability issue of dielectric charging in MEMS capacitive switches is discussed taking into account the present knowledge derived from the numerous papers on this topic. The weakness of the available charge injection model is pointed, the dependence of the material stoichiometry with film thickness resulting in lateral charge redistribution is discussed, the available assessment techniques are...
The present paper investigates the effect of stressing bias polarity to the discharge process of PECVD SiN films that takes place through the bulk of the dielectric film, with the aid of Kelvin Probe method, and the results are correlated to the material's properties. A new physical model is used in order to gain a better understanding to the processes that are responsible for the appearance of asymmetric...
The electrical properties of gold rods nanostructured silicon nitride are investigated. The paper aims to determine the advantages of the nanostructured material over conventional dielectrics that will mitigate the dielectric charging and provide a potential candidate for insulating films in MEMS capacitive switches. Different nanorod diameters and densities were grown. A model was implemented to...
Dielectric charging is an important reliability issue for RF MEMS capacitive switches still preventing their commercialization. Therefore a lot of effort has been spent on the understanding of charging and discharging processes. MIM capacitors are considered as equally important device for the assessment of dielectric charging for RF MEMS. Beside the obvious similarities between MEMS switches in the...
The present paper investigates the effect of temperature on the charging process in dielectric films of MEMS capacitive switches. The investigation includes the assessment of MIM capacitors and MEMS capacitive switches. The data analysis shows that the dielectric charging is thermally activated and the process can be described by a system with a wide distribution of relaxation times that exhibits...
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