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In the present paper we investigated the growth and electronic properties of Pt or Au clusters and formation of Pt–Au bimetallic clusters prepared “in-situ” on tungsten oxide surface by physical deposition under vacuum. The epitaxial tungsten oxide thin films were prepared by oxidation of W(110) single-crystal surface using a RF oxygen plasma source followed by thermal annealing. The chemical state...
The main objective of the present study was identification of the electronic states associated with W ions and defects (oxygen vacancies), which determine the surface stoichiometry of WO 3 thin films and consequently their reactivity. The electronic surface structure of WO 3 thin films was deduced from electron energy loss spectroscopy (EELS) analyses. We have investigated the changes...
Tungsten oxide plays an important role in a variety of electrochromic devices, catalysts and chemical sensors. Doping of the surface of these devices by any active metal can be used to control their sensitivity and selectivity. Fundamental studies of the dependency of physical and chemical properties on the device structure are often performed on well-defined epitaxial (model) systems.In our studies,...
Tungsten oxide nanoclusters were prepared by evaporation of tungsten oxide powder from a specially designed evaporation cell under ultra high vacuum (UHV) conditions. The (0001), (2¯110) and (1¯102) α-Al 2 O 3 single-crystal substrate surface orientations were used as substrates. The structure and epitaxial parameters of tungsten oxide nanoclusters were determined by reflection high-energy...
In this work, properties of non-evaporable getter (NEG) films prepared on stainless steel substrates by magnetron sputtering were investigated. Changes of the sample surface during thermal activation were studied by means of secondary ion mass spectroscopy (SIMS). Static SIMS observation of a superficial layer as well as dynamic profiling of the surface region were performed.Two samples of the same...
The activated ZrV non-evaporable getter (NEG) film has been studied by means of X-ray photoelectron spectroscopy, low-energy ion scattering and secondary ion mass spectrometry. In this work, we found that the first atomic layer of the thermally activated ZrV NEG consists mainly of zirconium atoms, which are partly oxidized. The residual zirconium suboxides observed on thermally activated ZrV NEG diminish...
Thin films of Zr 44 V 56 alloy getter films were prepared on stainless-steel substrates by magnetron sputtering. The getter activation behaviour was investigated by X-ray photoelectron spectroscopy and static secondary ion mass spectroscopy (SSIMS).Both measurements reflect the disappearance of the superficial oxide layer covering air-exposed Zr-V surfaces via consecutive...
Pd x Co 1-x thin layers with different stoichiometry, prepared by DC magnetron sputtering on α-Al 2 O 3 (sapphire) substrates, were investigated by X-ray photoelectron spectroscopy (XPS), static secondary ion mass spectroscopy (SSIMS) and temperature programmed desorption (TPD). The shifts of Pd 3d, XPS Auger Pd-MNN and the valence-band centre toward higher...
Reflection high-energy electron diffraction (RHEED) is attractive as a technique for structural surface determination. The RHEED facility was equipped with a novel energy analyser permitting to measure energy loss spectra of diffracted high-energy electrons (RHEELS). The combination of RHEED and RHEELS is especially useful in the early stages of thin film growth when the intensity of the diffraction...
Niobium (Nb) thin films were grown on (111) and (100) surfaces of Cu single-crystals using a special Nb evaporation source. The quality of the substrate surface and epitaxial parameters of the Nb over-layers were examined by reflection high energy electron diffraction. Two types of Nb deposit structure have been found and are dependent on the substrate temperature during the deposition. At room substrate...
The epitaxial growth of very thin palladium layers on α-Al 2 O 3 (1120) single-crystalline substrates was controlled in situ by Reflection High Electron Energy Diffraction. The substrates were prepared by heating in air and/or under vacuum in order to obtain well stoichiometric and partially reduced surfaces, respectively. The three-dimensional growth mode has been found, giving...
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