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In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation...
In this paper, a study of Ni suicide formed on SOI substrate that has different Si thickness (Tsi = 27, 50 nm) is performed in depth. The dependence of Ni silicide on the thickness of Ni/Co is also characterized. Ni silicide on SOI film exhibits quite different characteristics compared to that on bulk silicon. That is, Ni silicide on SOI showed 'V' shape as a function of deposited Ni/Co thickness...
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