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Gallium nitride (GaN) is a promising semiconductor material with high electron mobility, larger sheet carrier concentration, and wide energy bandgap. Open-gate AlGaN/GaN high electron mobility transistors (HEMTs) are shown to be an effective method for detection polar liquids. In this work, the pH sensing response of an open-gate HEMT is investigated. The device exhibits a good linear pH detection...
The graphical display of the fault tree is urgently needed for the equipment in fault diagnosis and reliability analysis, while the practical application of the fault tree drawing and display is mostly achieved under the Client/Server(C/S) mode which lacks portability, universality. Thus, a fault tree graphic drawing software based on Visio Drawing Control 2007 has been proposed by using C# language...
Electrothermal characterization of the advanced SOI FinFETs is performed in this paper, which is based on some analytical equations as well as in-house developed finite difference algorithm. The temperature-dependent properties of thermal conductivities of all materials involved are considered in our simulation, with results validated by the commercial software ANSYS and other analytical solution...
Network traces are one of the most exhaustive data sources for the forensic investigation of computer security incidents. Recent advances in capturing the network traces techniques have facilitated the forensic processing, including the reconstruction. Unfortunately, off-line web-downloading chain reconstruction could not meet the demands for real time processing. Furthermore, the packets in prior...
Fully homomorphic encryption has been viewed as a mechanism that enables to do arbitrary computations on encrypted data, without ever decrypting it. So fully homomorphic encryption owns great value in cloud computing, secure multiparty computation and so on. To obtain a leveled fully homomorphic encryption scheme, we present a comparatively simple and natural method, that is the approximate eigenvector...
A serial-input serial-output encoder based on pipelined rotate-left-accumulator (RLA) circuits is designed for multi-rate Quasi-Cyclic Low-Density Parity-Check (QC-LDPC) codes of Chinese digital terrestrial/television multimedia broadcasting (DTMB) standard. The RLA circuit can make the area usage economical, and the pipelined architecture can simplify the memory structure. The encoder is implemented...
A four-channel time-interleaved pipelined ADC employs a new timing calibration technique to suppress mismatch-induced spurs and achieve a Nyquist-rate SNDR of 44.4 dB. Designed in 65-nm CMOS technology, the ADC draws 120 mW, providing an FOM of 219 fJ per conversion step.
An improved bit-parallel RS encoding algorithm, which combines base conversion, multiplication, and base inverse conversion into a matrix operation, is presented in this paper, and a rapid way to generate this matrix is proposed at the same time. It is demonstrated that there is no need to search for the optimal dual basis. Finally, its feasibility and validity have been verified through FPGA platform.
To keep stray inductance low is a basic requirement in package design of IGBT modules. Meanwhile, paralleling of several switches is unavoidable in modern power electronics to insure always increasing current levels. Current balance between paralleled chips is another concern. In this paper, a simple power module, several different types of IGBT chips are respectively associated to reach the classical...
A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and controllable triggering voltage and fine heat dissipation capability are achieved.
We report a study of carrier transport in strained n-channel MOSFETs (nFETs) with embedded silicon-carbon (Si:C) source/drain (S/D) stressors formed in close proximity to the channel, taking parasitic resistance into account in the extraction of carrier transport parameters. While bringing the Si:C S/D stressors closer to the channel improves their effectiveness in imparting tensile strain to the...
Parasitics are a major concern in design of IGBT gate driver with both high switching speed and high power handling requirements. This paper presents the parasitics influence on the static and dynamic performance. It is shown that the dominant parasitic inside the module and driver circuit. They cause voltage spike or unbalanced transient current between paralleled IGBTs.
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