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With the aid of depth‐resolved confocal microscopy, the optical crosstalk phenomenon in GaN‐based micro‐pixel light‐emitting diodes (μ‐LEDs) on Si substrates are thoroughly investigated and compared with its counterpart on sapphire substrate. Noticeable optical crosstalk is invariably present in GaN‐on‐sapphire devices as the thick transparent sapphires beneath the μ‐LEDs serve as optical waveguides...
This paper presents a novel method for fabrication of silicon nanopore arrays. The proposed method comprises of an inductive coupled plasma (ICP) deep etching and a two-step anisotropic wet etching. A nanopore array with an average feature size of 55 nm and several individual rectangular nanopores with feature sizes as small as 18 nm were successfully obtained using this method. These results indicate...
Molecular dynamics simulations were performed to investigate SiF 2 continuously bombarding the amorphous silicon surface with energies of 10, 50 and 100eV at normal incidence at 300K. With increasing incident energy, the deposition rate and etch rate increases. In the deposited amorphous films, SiF species is dominant. With increasing incident energy, the fraction of SiF 2 decreases,...
Wafer-scaled cost-effective technique for subwavelength structured (SWS) surface by means of anodic porous alumina masks directly formed on SiO2/Si substrates is demonstrated. Combined with ion beam etching and induced coupled plasma etching, SWS surface with a period of 100nm and a height of 200-300nm was achieved on 2 inch polished single crystalline Si wafer. A lower reflectivity below 6% was observed...
Two SMSD gate first planar CMOS devices were demonstrated. Vtn/Vtp= +0.49V/-0.48V were achieved by adjusting TiN to p-like metal and As I/I on nMOS. This enables the equivalent +/-0.2V low Vt target of N22 fully depleted CMOS technologies. Vtn/Vtp= 0.52/-0.55 were obtained by transforming PVD-TiN/Ti into n-like metal TiN/TiSix for nMOS and by Al I/I on TiN/Ti for pMOS. Al diffusion was facilitated...
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