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Tetragonal FeAl2 has been predicted a narrow-gap semiconductor stable at ambient pressure. However, only a complex, triclinic FeAl2 has been experimentally observed. We calculated the stability of tetragonal FeAl2 under various pressures and revealed that tetragonal FeAl2 is more stabilized under high pressure. We successfully synthesized tetragonal FeAl2 at 10GPa and 1873K with diamond-anvil cell...
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