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We present an isotropic fluorine based process to etch 4H-SiC substrates compatible with standard metallic etch masks and reasonable etching rates. Additionally, a new masking material has been established in order to obtain a stable protection of the layers underneath, based on a combination of sputtered AlN and Ni. The isotropic etching was achieved using a temperature assisted RF plasma etch process...
Resonant nanoelectromechanical systems (NEMS) are promising devices for a new class of ultrafast, highly sensitive devices. In this work, fabrication, operation, as well as sensing properties of ceramic wide band gap (AlN and SiC) NEMS sensors will be demonstrated. The internal strain of such beams can be used to improve the resonant performance of the devices. Special attention is drawn to the operation...
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