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New ultra low capacitance bidirectional transient voltage suppression (Bi-TVS) devices consist of two parallel unidirectional TVS devices facing opposite directions, have been fabricated for electrostatic discharge (ESD) protection applications. The reduced pressure chemical vapor deposition (RPCVD) technology allows growing uniform thin Si films with various doping conditions and thicknesses of a...
New RC-Pi type ESD/EMI filters were fabricated using the integrated passive devices technology. Unique TVS diodes were employed to improve the electrostatic discharge (ESD) strength of the filters without sacrificing capacitance. The fabricated filter device has a cut off frequency of 270 MHz and the attenuation higher than −30 dB at >1 GHz. ESD testing results demonstrated the filter was capable...
A fully integrated LC-type ESD/EMI filter was developed by the integrated passive devices (IPD) technology. Unique TVS diodes are employed to enhance its performance while maintaining robust ESD characteristics. The reliability and performance of ESD/EMI filter are confirmed based on both attenuation and electrostatic discharge (ESD) strength which could be evaluated by insertion loss (S parameter),...
A transient voltage suppression (TVS) diode with abrupt junctions has been developed using the low-temperature epitaxy and process technology. The triggering voltage at 6 V could be precisely controlled by the thickness and dopant concentration. The reliability of TVS device is confirmed based on its electrostatic discharge (ESD) strength in conjunction with the transmission line pulse (TLP) test...
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