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Blistering of 11 nm and 45 nm-thick Al2O3 layers deposited by ALD on silicon substrates is studied in Al-Al2O3-Si structures fabricated using a field isolated process. Blisters are shown to be unevenly distributed and with different dimensions depending on the structure area. After chemical etching down to silicon, round voids are revealed underneath the blisters depending on the etchant used, indicating...
In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO2-based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and...
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
Alumina (Al2O3) thin films have been deposited on silicon substrates by atomic layer deposition at 200°C using TMA as Al precursor and H2O or O3 as oxygen precursor. The growth rate has been found to be lower for ozone-based processes as compared to H2O. The electrical characterization of the deposited layers has shown that when using O3 the films exhibit larger defect densities as compared to those...
In this paper first results on the growth of thin layers of Al2O3, HfO2 and nanolaminates of them, by atomic layer deposition are reported. The electrical characterization of the deposited layers has been carried out by means of the analysis of the capacitance-voltage and current-voltage characteristics of aluminum-high-k dielectric-silicon capacitors. The obtained results show that for the same physical...
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