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In this paper, a novel back gated AlGaN/GaN High Electron Mobility Transistor (HEMT) structure is proposed for detection of biological molecules such as nucleic acids (DNAs, RNAs). The proposed device consists of a thin film layer of AlGaN on top of a GaN thin film layer grown on a substrate such as sapphire or silicon, wherein the substrate is completely back etched exposing the GaN surface for attachment...
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