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To enlarge the bandgap of Cu2SnS3 (CTS), Ag‐incorporating CTS thin films are successfully deposited by sulfurizing Ag‐Cu‐Sn precursors featuring various Ag contents and the constant Cu/Sn ratio of 1.75, which is the optimal value for CTS thin‐film solar cells. To control the Ag content of the films, the thickness of the Ag layers of the precursors is varied from 0 to 200 nm, which corresponds to...
In this paper, we fabricated thin films composed of (Cu,Ag)2SnS3 using a sulfurization process for photovoltaic devices. The stacked NaF/Sn/(Ag+Cu) precursor was deposited by sequential evaporation of Ag, Cu, and Sn elements and NaF followed by crystallization in a mixed sulfur/tin atmosphere for 30min at 530°C and 570°C, respectively. The X-ray diffraction patterns in all samples exhibited several...
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