The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In the present paper we report on studies of the group III/IV(113) systems of Al, Ga and In on Si(113) and Ge(113) with LEED and AES. LEED shows that after being annealed the surfaces of the Al/Si, Ga/Si and In/Ge systems facet to (103), (013), (112) and (115) facets while those of the In/Si, Al/Ge and Ga/Ge systems reconstruct to (113)-(1 2). In the entire tested range of coverage and annealing...
In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.