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The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell...
We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformal deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less...
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