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This paper presents the gate oxide dielectric strength and its thickness-dependent performance of a graphene nanoribbon MOSFET (GNRMOSFET). Here we have studied the transfer characteristics, on/off current (ION/IOFF) ratio, subthreshold slope and drain induced barrier lowering (DIBL) of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained...
A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the...
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