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We deposited cluster‐free P‐doped a‐Si:H films using a SiH4+PH3 multi‐hollow discharge plasma CVD method. The deposition rate sharply increased from 0.49 nm/s with an increasing gas flow rate ratio R = [PH3]/[SiH4] from 0% to 1.17 nm/s at R = 1.0%, then slightly increased to 1.27 nm/s for R = 10%. SiH* emission intensity monotonically increased with increasing R. The increase in deposition rate with...
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