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We studied the effect of gas flow ratio of the H 2 carrier gas to the NH 3 precursor on the physical and crystal properties of GaN. GaN was grown by vertical reactor metalorganic chemical vapour deposition (MOCVD) on a low-temperature-deposited GaN buffer layer. A (0001) sapphire substrate was used. The impact of the gas flow ratio as it was varied from 0.25 to 1 was investigated and...
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