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Binary information encoded within the spin of carriers can be transferred into corresponding right or left-handed circularly polarized photons emitted from an active semiconductor medium via carrier-photon angular momentum conversion. In order to attain maximized spin-injection at out-of-plane magnetic remanence, a number of material systems have been explored as possible solid-state spin injectors...
In this paper, growth, structural and magnetic properties of ultrathin Fe grown on GaN(OOOl) by molecular beam epitaxy. The films and their surfaces were monitored by in-situ reflection high energy electron diffraction (RHEED) and a crystal thickness monitor. The magnetic properties of the samples were determined by a superconducting quantum interference device (SQUID) magnetometer. Superparamagnetism...
In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable...
In this paper, the epitaxial growth and the magnetic property of different thickness of ultrathin Fe3O4 film on InAs(100) are reported. As-capped InAs(100) substrate is loaded to the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) deposition chamber, following an annealing at 600° C for 30 minutes before growth. Then an in situ reflectance high energy electron diffraction (RHEED) patterns of InAs...
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