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Binary information encoded within the spin of carriers can be transferred into corresponding right or left-handed circularly polarized photons emitted from an active semiconductor medium via carrier-photon angular momentum conversion. In order to attain maximized spin-injection at out-of-plane magnetic remanence, a number of material systems have been explored as possible solid-state spin injectors...
Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the substrates were kept at 673 K, followed by postgrowth annealing of a 3.0 nm thick epitaxial Fe at 500 K in an...
In this paper, the epitaxial growth and the magnetic property of different thickness of ultrathin Fe3O4 film on InAs(100) are reported. As-capped InAs(100) substrate is loaded to the ultrahigh vacuum (UHV) molecular beam epitaxy (MBE) deposition chamber, following an annealing at 600° C for 30 minutes before growth. Then an in situ reflectance high energy electron diffraction (RHEED) patterns of InAs...
Nanocrystalline (Fe1-xCox)86Hf7B6Cu1 alloys, where x=0,0.2,0.4,0.5,0.6,0.8 and 1, were investigated as potential magnetically soft materials for high temperature applications. The crystalization process of as-quenched alloys, obtained by melt-spinning technology, was studied by differential thermal analysis (DTA). All alloys crystallize in two stages, occuring between 400 degrees C and 800 degrees...
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