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This paper deals with oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, a stress interruption effect is evidenced on TBD and shown to depend significantly on fabrication process. Then, based on experiments done both with the OTF monitoring methodology and the Fast measurement using Agilent B1530A, the interruption signature on MOS parameters are analyzed. Finally, Maxwell-Wagner...
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
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