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Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S/sub V/(f), were found to be proportional to 1/f/sup /spl gamma// where /spl gamma/ depends on the device temperature as well as the gate bias. A study of S/sub V/(f) as a function of the biasing condition was conducted in detail and was found to vary as V/sub G//sup...
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