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The piezoresistive devices with the structure of ITO/poly(3‐hexylthiophene) (P3HT; spin coating 90 nm film)/Al (75 nm) have been fabricated and measured. We measured the I‐V characteristics of the devices under different stresses. The stress ranges from 0 to 510 kPa and the voltage ranges from 0 to 5 V. The resistance of the devices is very sensitive to the applied stress. The piezoresistive coefficient...
The loading curves and Young’s modulus of poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene) (MDMO-PPV) films have been measured using nanoindentation through single- and multicycle- test. The ITO\MDMO-PPV\Al devices were fabricated and measured. We measured the I–V characteristics of the devices under different stresses. We found that the applied stress makes the film not only tightened...
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