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Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed byrapid thermal processing at 300°C for 5minutes in Argon atmosphere. The films showed strong (040)crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energyband gap Eg=1.44eV and a P-type conductivity with a resistivity of 500Ω•cm. The activation energy ofthe...
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