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The optical properties of GaAs 1−x Sb x (5.9%≤x≤9.7%) layers grown on GaAs substrates by gas-source molecular beam epitaxy were characterized by photoreflectance (PR) and piezoreflectance (PzR). Identification of conduction to heavy-hole (HH) band and conduction to light-hole (LH) band transitions originated from the strained induced valence band splitting have been achieved by comparing...
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