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Selective area growth (SAG) of high-density (2.5×109cm−2) GaN nanowires (NWs) on Si(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of morphology and thickness of the AlN seeding layer on the quality of SAG GaN NWs are investigated. A thin AlN seeding layer of 30nm thick with a surface roughness of less than 0.5nm is suitable for high quality SAG GaN NWs growth....
Silica nanowires decorated with silver nanocrystals on quartz substrate were employed as SERS substrates. The substrates features reusablity, backside measurement, and wide measuring range from >0.1 M to near single molecule detection, tested on Rhodamine 6G.
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