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Total photoelectron yield spectroscopy has been applied to evaluate the energy distribution of electronic defect states for thermally grown SiO2/4H-SiC structure. A SiO2 layer with the thickness of 3.4nm, 7.6nm, and 21.6nm was grown on wet-chemically cleaned 4H-SiC surface by wet-oxidation at 1080°C. X-ray photoelectron spectroscopy analysis shows no significant structural inhomogenities in the SiO...
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