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We have fabricated two-tiered hetero-structures consisting of B δ-doped and P δ-doped Si quantum dots (QDs) embedded in SiO2 on p- and n-Si(100) by repeating Si-QDs formation by low pressure chemical vapor deposition (LPCVD) using pure SiH4 and subsequent surface oxidation and modification by remote plasma, and characterized their electroluminescence (EL) in near-infrared region under DC and AC bias...
Multiple-stacked Si quantum dots (QDs) with ultrathin SiO2 interlayers were formed on ultrathin SiO2 layers by repeating a process sequence consisting of the formation of Si-QDs by low pressure chemical vapor deposition using a SiH4 gas and the surface oxidation and subsequent surface modification by remote hydrogen and oxygen plasmas, respectively. To clarify the electron emission mechanism from...
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