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We studied the epitaxial growth of a Ni film prepared on a GaAs(001) substrate covered with a thin epitaxial MgO buffer film, assuming that this buffer film plays a key role in the epitaxial growth of the Ni film. The MgO and Ni films were deposited by radio-frequency magnetron sputtering of the MgO and Ni targets in pure Ar gas. First, a MgO film of thickness ranging from 78 to 4.4nm was deposited...
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