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Co-Pt films were deposited on GaAs(001) substrates at room temperature or 200 o C by dc plasma sputtering with an application of a bias of 0 V or -150 V to the substrate. The Co-Pt films retain the face-centered cubic (fcc) structure grown with the 111-texture but the atomic composition in the films depends on both the substrate bias and the substrate temperature. The crystalline quality of...
CoPt films were prepared on MgO(001) substrates at 230 o C by d.c. sputtering. Both films on the unbiased and the biased (-150 V) substrates grow with the crystallographic orientation of CoPt(001)[100]//MgO(001)[100]. In fact, the unbiased film is deformed from the perfect face-centered cubic (fcc) structure towards the face-centered tetragonal (fct) structure with an incomplete ordered phase,...
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