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We demonstrate an amorphous higher-k (k>20) HfTiSiON gate dielectric for sub 32 nm node capable of low equivalent oxide thickness (EOT=0.84 nm). For the first time, we have addressed the thermodynamic instability of TiO2 containing gate dielectrics achieving an acceptably thin SiOx interface (0.7 nm) after 1070degC. 3-10times leakage current reduction is achieved with HfTiSiON vs. HfSiON due to...
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