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Thin film of indium oxide (In 2 O 3 ) is deposited on p-silicon substrate using sol–gel spin technique. The sol–gel spin deposited film is very smooth with grain size and root mean square surface roughness of ∼40nm and ∼7.9nm, respectively. The device parameters of Al/In 2 O 3 /p-Si Schottky diode were investigated using direct current current–voltage (I–V) and impedance...
The Schottky barrier junctions of tin disulfide (SnS 2 ) on p-silicon were fabricated using sol–gel spin technique. The photoresponse and junction properties of the diode were investigated. The ideality factor and barrier height of the Al/p-Si/SnS 2 /Ag diode were obtained to be 1.54 and 0.53eV, respectively. The photocurrent properties of the device under various illuminations were...
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