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The present work presents the influence of the growth parameters on the structural and optical properties of undoped GaAsN epilayers and triple quantum wells 3×InGaAsN/GaAs obtained by atmospheric pressure metal organic vapour phase epitaxy APMOVPE. The structures were examined using high resolution X‐Ray diffraction HRXRD, contactless electroreflectance CER, photocurrent PC and Raman RS spectroscopies...
Epitaxial growth of LT GaAs at low temperatures of around 200degC with an excess of a group V element leads to a non-stoichiometric layer properties. The electrical and optical parameters of such a layer are significantly changed and strongly depend on the post growth annealing conditions. To find the optimal annealing temperature of LT GaAs layers subsequent secondary ion mass spectroscopy (SIMS)...
A new method for determining the doping concentrations in very thin GaAs layers is presented. The method is based on the evaluation and calibration of the changes in ratio of transversal to longitudinal optical phonon intensities measured by micro-Raman spectroscopy at different positions along the bevel prepared through the examined structure. The doping concentrations measurements by micro-Raman...
Analysis of thin layer structures can be achieved by chemically etching a bevel and subsequently analysing the surface. However non-linear bevels often result due to differing etch rates of the materials leading to incorrect analysis results. We report on a computer controlled stepper motor reactor whereby the specimen is lowered into the etchant at a rate which compensates for the different etch...
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