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We demonstrate for the first time, asymmetrically strained Ge, high-κ/metal gate nanowire (NW) trigate p-MOSFETs with record hole mobility of 1490 cm2/Vs. This mobility is 2x above on-chip, biaxially strained Ge planar FETs and ∼15x above Si universal mobility. The fabrication approach features: (1) a new strained Si/strained Ge/HfO2 NW channel materials stack, with HfO2 dielectric at the bottom which...
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