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The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Tei, and VCd were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant‐related defects is lower in...
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