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A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbOx, TiOx, and ZrOx. It was found that the...
Fatigue is a commonly known failure mechanism in Pt/PZT/Pt thin film capacitors. The remnant polarization shows a fast drop after 105 to 106 bipolar switching cycles. The reason for this loss of switchable polarization is mainly unknown. We studied the influence of the used switching signal, especially the influence of its shape. A great number of fatigue measurements had to be taken to get reliable...
After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiOx/SiOx/Si substrates using liquid injection ALD. Zr(C11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to...
High piezoelectric coupling coefficients of PZT-based material systems can be employed for actuator functions in micro-electro-mechanical systems (MEMS) offering displacements and forces which outperform standard solutions. This paper presents simulation, fabrication, and development results of a stress-compensated, PZT-coated cantilever concept in which a silicon bulk micromachining process is used...
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