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To understand the switching mechanism in resistive switching memories it is important to study the switching kinetics over several orders in time. One open question is the upper limit of the switching speed. In this study, we present a switching kinetics study on Ta2O5-based resistive memories that spans over 15 order of magnitude in time in a single device. Using coplanar waveguide (CPW) devices...
Memristive devices enable non-volatile data storage and in-memory computing capabilities. By using stateful logic approaches, hybrid CMOS nano-crossbar arrays offer additional functionalities such as arithmetic operations. To enable storage and computing on large-scale arrays, parasitic current paths within the array must be avoided. Therefore, for example, a complementary resistive switch (1CRS)...
We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.
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