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Redox-based resistive switching devices are an emerging class of non-volatile ultra-scalable memory and logic devices. These devices offer complex internal device physics leading to rich dynamical behavior. Memristive device models are intended to reproduce the underlying redox-based resistive switching device behavior accurately to enable proper circuit simulations. A specific feature of resistively...
The review provides a survey of non-volatile, highly scalable memory devices which are based on electrochemical and thermochemical phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms, and a sketch of the integration efforts will be presented.
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