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Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation...
The paper presents an impedance analysis of SrTiO 3 thin films with La, Fe, and Mn, respectively, as heterovalent substiuents. The films were prepared by chemical solution deposition. Dopant concentrations were varied in the range from 0.1 at% to 5 at% for the electrical studies. Aluminum as a low-workfunction metal was employed as the cathode electrode. The current response upon a d.c. voltage...
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