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Vertical-cavity top-emitting quantum well lasers are grown by molecular beam epitaxy. The active region consists of three 100 AA GaAs quantum wells separated by 80 AA Al/sub 0.3/Ga/sub 0.7/As barriers. Continuous wave lasing by current injection is maintained at temperatures up to 80 degrees C. At room temperature, light output power more than 1 mW is obtained, and threshold currents are as low as...
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