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White light-emitting diodes (LED) based on ZnO (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN were fabricated and their electrical, optical and electro-optical characteristics were comparatively characterized. All the LED showed rectifying behavior. The nanowalls and nanorods structures have the highest photoluminescence emission intensity in the visible and UV (at 3.29eV) regions, respectively...
In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p–n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3.91±0.11 together with a reverse saturation current of 6.53±4.2×10-8A. Up to...
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