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The ON-state reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology under gate overdrive is reported. A critical gate forward voltage (VGC) is observed, beyond which the turn-on voltage of the 2DEG channel exhibits a negative shift. This phenomenon is proposed to be caused by the impact ionization of the F ions in the barrier layer by hot electron injection...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
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