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In this paper, silicon oxynitride is deposited through plasma-enhanced chemical vapor deposition (PECVD) to serve as an antireflection passivation layer. We have studied the effects of the deposition temperature (from 100 to 300°C) on the electrical and optical performances of GaN-LEDs. It is found that the light output of GaN-LEDs improves greatly after the deposition of SiON antireflection passivation...
The deposition process of passivation layer for GaN-LEDs can affect the optical and electric properties of these devices. In this paper, we use an ammonia-free process to deposit the silicon oxynitride film at low temperature (100°C) through plasma enhanced chemical vapor deposition (PECVD) to serve as the passivation layer of GaN-LEDs, investigating the relationship between the refractive index of...
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