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A special HT-/LT-/HT-AlN sandwich buffer layer was used to diminish the strain between its upper or overlying GaN and underlying Si substrate. It is found that, by simply inserting a LT-AlN layer, one can get an almost crack free GaN layer on Si substrate. SEM images gave a clear observation of the effect of LT-AlN insertion layer on surface morphology. Further analysis of the residual stress in overlaying...
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